Transceiver Single Bit Dual Supply Bus 74Lvc1T45 1.65V To 5.5V Sot-23-6
Transceiver Single Bit Dual Supply Bus 74Lvc1T45 1.65V To 5.5V Sot-23-6
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The SN74LVC1T45DBVR is a Single-bit Dual-supply Bus Transceiver with configurable voltage translation and 3-state outputs. This single-bit non-inverting bus transceiver uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.65 to 5.5V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65 to 5.5V. This allows for universal low-voltage bidirectional translation between any of the 1.8, 2.5, 3.3 and 5V voltage nodes. Designed for asynchronous communication between two data buses. The logic levels of the direction-control (DIR) input activate either the B-port outputs or the A-port outputs. The device transmits data from the A bus to the B bus when the B-port outputs are activated and from the B bus to the A bus when the A-port outputs are activated. The input circuitry on both A and B ports always is active and must have a logic HIGH or LOW level applied to prevent excess ICC and ICCZ.
Features
- Port to operate over full 1.65 to 5.5V power supply range
- VCC isolation feature
- DIR input circuit referenced to VCCA
- Low power consumption, 4μA maximum ICC
- ±24mA Output drive at 3.3V
- Ioff supports partial power-down mode operation
- 420, 210, 140 and 75Mbps Maximum data rates
- Latch-up performance exceeds 100mA per JESD 78, class II
- Green product and no Sb/Br
| Specifications | |
|---|---|
| Logic Device Type | Transceiver, Non Inverting |
| Logic Family / Base Number | 74LVC1T45 |
| Logic Case Style | SOT-23 |
| No. of Pins | 6Pins |
| Supply Voltage Min | 1.65V |
| Supply Voltage Max | 5.5V |
| Logic IC Family | 74LVC |
| Logic IC Base Number | 741T45 |
| Operating Temperature Min | -40°C |
| Operating Temperature Max | 85°C |
| Important Product Warning: | Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. |
| Country of Origin: | China |
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