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RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247 - MRF300BN
RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247 - MRF300BN
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£56.89 GBP
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These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 250 MHz.
Features
- Unmatched input and output allowing wide frequency range utilization
- Two opposite pin-connection versions (A and B) to be used in a push-pull, two-up configuration for wideband performance
- Characterized from 30 to 50 V
- Suitable for linear application
- Integrated ESD protection with greater negative
| Specifications | |
|---|---|
| Drain Source Voltage Vds | 133V |
| Power Dissipation | 272W |
| Power Dissipation Pd | 272W |
| Operating Frequency Min | 1.8MHz |
| Operating Frequency Max | 250MHz |
| Transistor Case Style | TO-247 |
| RF Transistor Case | TO-247 |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Important Product Warning: | Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts. |
| Country of Origin: | China |
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