RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247 - MRF300AN
RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247 - MRF300AN
Regular price
£40.69 GBP
Regular price
Sale price
£40.69 GBP
Unit price
/
per
These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 250 MHz
Features
- Unmatched input and output allowing wide frequency range utilization
- Two opposite pin--connection versions (A and B) to be used in a push-pull, two-up configuration for wideband performance
- Characterized from 30 to 50 V
- Suitable for linear application
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
Specifications | |
---|---|
Drain Source Voltage Vds | 133V |
Power Dissipation | 272W |
Power Dissipation Pd | 272W |
Operating Frequency Min | 1.8MHz |
Operating Frequency Max | 250MHz |
Transistor Case Style | TO-247 |
RF Transistor Case | TO-247 |
No. of Pins | 3Pins |
Operating Temperature Max | 175°C |
Important Product Warning: | Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts. |
Country of Origin: | China |